IEEE Transaction on Electronics Devices

---

2 D Analytical Modeling of the Electrical Characteristics of Dual Material DG TFETs with a SiO2 High k Stacked Gate Oxide Structure

• Read more about 2 D Analytical Modeling of the Electrical Characteristics of Dual Material DG TFETs with a SiO2 High k Stacked Gate Oxide Structure

Subscribe to IEEE Transaction on Electronics Devices