Dr APJ Abdul Kalam Technical University Uttar Pradesh, Lucknow

The research focuses on two advanced TFET architectures: Hetero-Dielectric Dual Source Vertical TFET (HDG-DS-VTFET) Heterojunction Triple Metal Dual Gate Extended Source TFET (Hetero-TMDG-ES-TFET)Both are designed for ultra-low-power and high-frequency applications. Enhanced Performance via TCAD SimulationUsing SILVACO-ATLAS 2D simulations, the proposed devices show significant improvements in DC, RF, analog, and noise characteristics compared to conventional TFETs. Key Benefits of HDG-DS-VTFET Exhibits steep subthreshold slope (SS) Shows reduced threshold voltage (Vth) Achieves a high ION

In the Very Large Scale Integration (VLSI) technology, many advancements are happening in the semiconductor industry, and these developments arise due to the increasing demand for battery-operated devices; these include laptops, smartphones, tablets, and many biomedical devices. There is a need for electronic components that can convert the analog signal into a digital signal, which is used to store the signals in memory and for further data processing and communication. There is an increase in demand for high-pixel cameras and high storage memory.