Sheetal Singh (PHD/21/ECE/2715)
The research focuses on two advanced TFET architectures:
Hetero-Dielectric Dual Source Vertical TFET (HDG-DS-VTFET)
Heterojunction Triple Metal Dual Gate Extended Source TFET (Hetero-TMDG-ES-TFET) Both are designed for ultra-low-power and high-frequency applications.
Enhanced Performance via TCAD Simulation Using SILVACO-ATLAS 2D simulations, the proposed devices show significant improvements in DC, RF, analog, and noise characteristics compared to conventional TFETs.
Key Benefits of HDG-DS-VTFET
Exhibits steep subthreshold slope (SS)
Shows reduced threshold voltage (Vth)
Achieves a high ION